The entry of Zn into Ga0.7Al0.3As and single heterostructures was studied. It was found that the depth of the diffusion front was proportional to the square root of the diffusion time. In the case of heterostructures, the Ga0.7Al0.3As layer thickness modified the relationship by decreasing the junction depth to an extent which was some multiple of the layer thickness. The relationship could be used to predict diffusion fronts in double heterostructures.

H.J.Yoo, Y.S.Kwon: Journal of Electronic Materials, 1988, 17[4], 337-9