Samples of Ga0.7Al0.3As were grown onto a Si substrate and were diffused with Zn from a ZnAs2 source. It was found that the Zn diffusivity was greater in these layers than in layers which were grown on a GaAs substrate. The effective diffusion coefficient was related to the defect density in the GaAlAs, and to the diffusion depth. A simple model showed that the diffusivity along dislocations was some 5 times higher than that in dislocation-free bulk material.

S.Sakai, Y.Terauchi, N.Wada, Y.Shintani: Japanese Journal of Applied Physics, 1991, 30[9A], 1942-3