It was recalled that previous work had indicated that (Si2)x(GaAs)1-x could be formed within the GaAs quantum well of an AlxGa1-xAs-GaAs quantum well heterostructure. It was shown here that the Si concentration in the (Si2)x(GaAs)1-x layer greatly exceeded typical doping levels. The stability of the quantum well heterostructures was investigated with respect to thermal annealing and Zn impurity-induced layer disordering. The results showed that the (Si2)x(GaAs)1-x alloy was stable with respect to thermal annealing unless a rich source of Ga vacancies was provided. Also, relatively low-temperature Zn diffusion greatly enhanced the disordering of the alloy layer.

L.J.Guido, N.Holonyak, K.C.Hsieh, R.W.Kaliski, J.E.Baker, D.G.Deppe, R.D.Burnham, R.L.Thornton, T.L.Paoli: Journal of Electronic Materials, 1987, 16[1], 87-91