A study was made of I diffusion into Zr, as compared with ZrO2. In order to analyse the mechanisms which were involved in I migration, stable (127I) and radioactive (131I) species were implanted into Zr. The I diffusion profiles were monitored as a function of annealing time (up to several hours) and temperature (400 to 600C) by using Rutherford back-scattering spectrometric profiling or γ-ray spectroscopy of 131I release. These techniques permitted the determination of I diffusion coefficients which were as low as 10-17cm2/s.

Diffusion Study of Implanted Iodine in Zirconium using Ion Beams. N.Moncoffre, G.Carlot, A.Chevarier: Surface Coating Technology, 2000, 128-129, 9-14