It was shown that donor diffusion and layer intermixing were greatly enhanced in the presence of defects which were created by crystal overgrowth on locally laser-melted substrates. Accelerated defect and impurity-induced layer disordering, and donor diffusion from a solid SiO2 source, a Ge vapor source or a grown-in Se source were observed in regions of high defect density. Enhanced donor diffusion and crystal self-diffusion were attributed to an increased density of column-III defects and dislocations.

F.A.Kish, W.E.Plano, K.C.Hsieh, A.R.Sugg, N.Holonyak, J.E.Baker: Journal of Applied Physics, 1989, 66[12], 5821-5