A study was made of the in-diffusion of various group-IV and group-VI n-type impurities. In all cases, the n-type dopants enhanced the Al-Ga interdiffusion coefficient above that which could be attributed to an As over-pressure alone. The Si-induced enhancement had previously been attributed to a change in Fermi-level position with doping and could therefore account for disordering by other n-type impurities. However, important differences were observed in the interdiffusion characteristics that were induced by Si or Ge, and by S or Se. The disordering was attributed to an enhancement of the group-III vacancy concentration for each of these n-type impurities. This was also true of undoped crystals which were disordered by an As ambient alone at 855C.

B.L.Olmsted, S.N.Houde-Walter: Applied Physics Letters, 1993, 62[13], 1516-8