The interdiffusion of Ga and Al in AlGaAs alloys which were subjected to various annealing temperatures, times and environments was considered. The interdiffusion coefficients (table 5) and activation energies were determined by relating shifts in the photoluminescence peaks to calculated transition energies which were based upon an erf composition profile. It was noted that a Ga over-pressure reduced interdiffusion whereas an As over-pressure increased interdiffusion. This was thought to be the first study of the effect of a Ga over-pressure upon the interdiffusion of Al and Ga in AlGaAs.

K.Y.Hsieh, Y.C.Lo, J.H.Lee, R.M.Kolbas: Institute of Physics Conference Series, 1989, 96, 393-6

Table 5

Interdiffusivity (Al-Ga) in AlGaAs/GaAs