Quantum-well heterostructures were annealed in an AsH3/H2 atmosphere, and the use of photoluminescence spectroscopy revealed a uniform and reproducible increase in the effective quantum-well band-gap. The energy shift data indicated that Al/Ga interdiffusion occurred under non-equilibrium conditions. The activation energies varied from about 5.2eV, in the equilibrium case, to about 3.4eV in the non-equilibrium case.

S.Seshadri, L.J.Guido, T.S.Moise, J.C.Beggy, T.J.Cunningham, R.C.Barker, R.N.Sacks: Journal of Electronic Materials, 1992, 21[1], 33-8