The behavior of implanted Si+ ions was investigated during rapid thermal annealing at temperatures of between 600 and 900C. The apparent activation energy for Si was equal

to 0.58eV. Lower activation efficiencies of the dopant were found in InAlAs, as compared with InGaAs. The Si underwent no migration, even after annealing at 850C.

E.Hailemariam, S.J.Pearton, W.S.Hobson, H.S.Luftman, A.P.Perley: Journal of Applied Physics, 1992, 71[1], 215-20