The Ti implantation of p-type material was carried out on In0.52Al0.48As at room temperature or 200C. The implanted Ti exhibited only slight in-diffusion and out-diffusion after both room temperature and 200C implantation. Rutherford back-scattering measurements of annealed samples which had been implanted at 200C revealed a crystal quality which was similar to that of virgin material. The resistivity of all of the samples after annealing was greater than 106 cm.

J.M.Martin, R.K.Nadella, M.V.Rao, D.S.Simons, P.H.Chi, C.Caneau: Journal of Electronic Materials, 1993, 22[9], 1153-8