The effect of the substrate orientation upon Be transport during GaAs molecular beam epitaxy was studied by means of secondary ion mass spectrometry. The substrates were misoriented from (100) towards (111)A, and epitaxial growth was performed at 630C for Be dopant contents of between 5 x 1019 and 7 x 1019/cm3. Surface segregation and anomalous diffusion similarly depended upon the substrate orientation. In the case of the (311)A orientation, Be transport was sharply reduced from its value for the conventional (100) orientation. The results were explained qualitatively by considering the effect of atomic steps upon the growing surface.

K.Mochizuki, S.Goto, C.Kusano: Applied Physics Letters, 1991, 58[25], 2939-41