The diffusion profiles of buried Be dopant which had been implanted by using a focussed ion beam were determined after annealing. The diffusion coefficient of the Be was determined by fitting the results of computer calculations. It was found that the diffusion coefficient of the Be was enhanced by excess interstitial Be. The Be diffusion profiles expanded upon annealing at 850C. The diffusion coefficient of Si which had been introduced by using a focussed ion beam was undetectably small when compared with that of Be at 850C.

T.Morita, J.Kobayashi, T.Takamori, A.Takamori, E.Miyauchi, H.Hashimoto: Japanese Journal of Applied Physics, 1987, 26[8], 1324-7