A study was made of the diffusion of Be in -doped layers of (111)A- or (100)-type, and of the evaporation of As atoms from the surfaces. It was found that the diffusion of dopants in (111)A layers was slower than in (100), regardless of the presence of As vacancies. On the other hand, diffusion in (100) layers was enhanced by the presence of As vacancies. It was noted that As atoms on the (111)A surface did not evaporate easily, as compared with those on the (100) surface.

A.Shinoda, T.Yamamoto, M.Inai, T.Takebe, T.Watanabe: Japanese Journal of Applied Physics, 1993, 32[2-10A], L1374-6