Heterostructures of GaAs/Ga0.7Al0.3As, which contained Zn and Se as intrinsic p and n dopants, were subjected to combined Be and O implantation. Rapid thermal annealing then resulted in the redistribution of Be. The Se dopant profile remained essentially unchanged. The atomic profile Be could be related to the microscopic defect distributions. A change in the photoluminescence spectrum, due to over-compensation of the n-doped GaAs and GaAlAs layers, was observed and the corresponding signals which were associated with Be were identified.

T.Humer-Hager, R.Treichler, P.Wurzinger, H.Tews, P.Zwicknagl: Journal of Applied Physics, 1989, 66[1], 181-6