The removal of damage after heavy implantation with 111mCd and 111In was investigated by using perturbed angular correlation and Hall techniques. After implantation at 90K, and subsequent annealing, the removal of structural disorder in the vicinity of the 111In probe atom was observed at about 300K. The annealing behavior, at temperatures ranging from 500 to 1100K, of GaAs which had been implanted with 111mCd and 111In was investigated as a function of total implantation dose. After annealing at 600K, some of the Cd probe atoms were located in a slightly perturbed environment while the remainder were in a heavily perturbed one. Annealing at temperatures above 900K led to the out-diffusion of Cd which was located in heavily perturbed sites, and electrical activation occurred. In contrast to Cd, all of the In probe atoms were located in a slightly perturbed environment and no In was lost by out-diffusion. These differences were explained in terms of extended defects and their interactions with probe atoms.

W.Pfeiffer, M.Deicher, R.Kalish, R.Keller, R.Magerle, N.Moriya, P.Pross, H.Skudlik, T.Wichert, H.Wolf: Materials Science Forum, 1992, 83-87, 1481-6