It was recalled that a Cu-related peak at about 1.35eV was generally observed in the low-temperature photoluminescence spectra of epitaxial layers. Samples were treated in Cu-saturated aqueous KOH solutions at room temperature, and it was shown that Cu could be deposited onto the semiconductor surface when a source of metallic Cu was present in the KOH solution. The results suggested that Cu could diffuse into the semiconductor, even at room temperature.

K.Somogyi, D.N.Korbutyak, L.N.Lashkevich, I.Pozsgai: Physica Status Solidi A, 1989, 114[2], 635-42