The diffusion of D in Si-doped GaAs was studied. It was found that the diffusion profile could be closely fitted by using an erfc function. It was suggested that, in Si-doped samples, the D behaved like a deep acceptor with a level, H-/0, which was slightly resonant in the conduction band.

J.Chevallier, B.Machayekhi, C.M.Grattepain, R.Rahbi, B.Theys: Physical Review B, 1992, 45[15], 8803-6