The D diffusion profiles in material which was doped with various group-II (Mg, Zn, Cd) or group-IV (C, Ge) acceptors had similar characteristics; even though the neutralization of acceptors at 300K was not always efficient. Conductivity and Hall-effect measurements were used to study the electrical characteristics of hydrogenated p-type epilayers. The temperature dependences of the free carrier concentration and hole mobility, before and after hydrogenation, showed that the neutralization of acceptors by atomic H led to the elimination of the shallow acceptor states. Infra-red absorption lines that were associated with H-acceptor complexes were observed for all of the acceptors, except Mg. It was established that the microscopic structure of H-acceptor complexes depended upon the acceptor site in the lattice.

R.Rahbi, B.Pajot, J.Chevallier, A.Marbeuf, R.C.Logan, M.Gavand: Journal of Applied Physics, 1993, 73[4], 1723-31