A review was presented of self-diffusion mechanisms and doping-enhanced superlattice disordering. It was concluded that Ga diffusion involved triply negatively charged Ga vacancies, under intrinsic and n-doped conditions. With regard to the influence of p-type dopants, the Fermi level effect had to be considered; together with dopant diffusion-induced Ga self-interstitial supersaturation or undersaturation. The self-diffusion of Ga in heavily p-doped material was governed by positively charged Ga self-interstitials. It was concluded that dislocations in this material and in other III-V compounds were only moderately efficient sinks or sources for point defects.

T.Y.Tan, U.Gösele: Materials Science and Engineering, 1988, B1, 47-65