The concentration versus depth profiles of carriers, electrically active defects, and D, after exposure to a H plasma (or molecular H), were fitted by using a simple diffusion model which involved second-order reactions. It was found that the activation energy for H diffusion, and the dissociation energies of H-defect complexes, depended upon the H concentration. There was no molecular H formation and there were no fast-diffusing H species away from the near-surface region. Atomic H could in-diffuse and passivate EL2 defects when semi-insulating material was annealed at a high temperature in a molecular H ambient.

R.A.Morrow: Journal of Applied Physics, 1989, 66[7], 2973-9