The correlation between the electrical conductivity and photoluminescence spectra of a wide range of n-type, p-type, and semi-insulating material which had been diffused with Li was investigated. It was found that Li diffusion compensated both n-type and p-type material, and had a marked effect upon the photoluminescence properties of the samples. The photoluminescence bands which were observed, between 1.47 and 1.49eV in Zn-doped GaAs, were related to the compensation of Zn acceptors. The photoluminescence bands, which were observed at 1.43 to 1.45eV in all of the samples, were attributed to a Li-related acceptor complex which gave rise to the p-type conductivity which was observed in all of the samples after full compensation.

H.P.Gislason, B.Yang, I.S.Haukson, J.T.Gudmundsson, M.Linnarsson, E.Janzén: Materials Science Forum, 1992, 83-87, 985-90