Un-capped wafers were annealed in an AsH3-N2 atmosphere for 10s, at temperatures of up to 1100C. No surface decomposition occurred under an AsH3 partial pressure of 12.5torr. The present method was used to activate implanted Mg. Measurements of the sheet resistance of the annealed layers, as a function of the annealing temperature, revealed a minimum at a temperature of about 930C. At higher temperatures, the diffusion of Mg became significant. Part of the Mg accumulated at the surface and diffused out. The internal diffusion of Mg at high temperatures depended upon the AsH3 pressure during annealing.

H.Tews, R.Neumann, A.Hoepfner, S.Gisdakis: Journal of Applied Physics, 1990, 67[6], 2857-61