The surface of material which had been implanted with Mg ions (100keV, 1015/cm2) was encapsulated with As-doped amorphous hydrogenated Si to a thickness of about 80nm. It was found that the sheet carrier concentration in thermally annealed samples increased with increasing concentration of As in the encapsulant. After annealing (800C, 0.25h), a sheet carrier concentration of about 3 x 1014/cm2 was observed in samples which were capped with films that were doped with 2 x 1020/cm3 of As. It was noted that the diffusivity of the implanted Mg was retarded upon increasing the concentration of As in the amorphous hydrogenated Si encapsulant.

K.Yokota, M.Sakaguchi, H.Inohara, H.Nakanishi, S.Tamura, Y.Horino, A.Chayahara, M.Satho, K.Hira, H.Takano, M.Kumagaya: Solid-State Electronics, 1994, 37[1], 9-15