Experimental evidence for H-B interactions in B-doped material, arising from H-diffusion investigations, was reported. Original D-diffusion studies of homo-epitaxial B-doped films revealed that H diffusion was limited by the B concentration; with a low effective diffusion activation energy. The results were consistent with H ionization and with the diffusion of fairly mobile H+ which formed pairs with B-. Infra-red spectroscopy revealed that B acceptor electronic transitions were removed by hydrogenation.

Hydrogen-Boron Interactions in p-Type Diamond. J.Chevallier, B.Theys, A.Lusson, C.Grattepain, A.Deneuville, E.Gheeraert: Physical Review B, 1998, 58[12], 7966-9