The thermal surface oxidation of samples in dry O2 and in ambient air was investigated at temperatures ranging from 400 to 530C. The studies were carried out by using clean polished (111) substrates. It was found that monocrystalline wafers oxidized parabolically in dry O2 at temperatures of 400 to 450C. Linear oxide growth occurred, at temperatures ranging from 480 to 530C, in both in dry O2 and in ambient air. Wagner and Grimley-Trapnell models for metal oxidation were used to identify the growth kinetics. The rate constants for parabolic and linear oxidation were temperature-dependent, and satisfied Arrhenius relationships.

J.Kucera, K.Navratil: Thin Solid Films, 1990, 191[2], 211-20