Published depth profiles of D in n-type and p-type material, after extended annealing in D at 500C, were suggested to reflect the in-diffusion of a native defect (perhaps VAs) and an impurity (perhaps O); both of which were tagged with D. It was deduced that the diffusivity of the tagged impurity was equal to 4 x 10-14cm2/s at 500C. The diffusivity of the tagged native defect was deduced to be equal to 3 x 10-15cm2/s in n-type material, and to be equal to about 8 x 10-15cm2/s in p-type material.

R.A.Morrow: Applied Physics Letters, 1990, 57[3], 276-8