Experiments were performed on polished plates of Te-doped material. Irradiation with 15 to 150keV protons was carried out at 300K to doses of between 1016 and 1017/cm2. It was found that the impurity profiles did not depend upon whether the diffusion source was deposited before or after irradiation. The penetration depth in samples which were irradiated with 15keV protons was greater than that in samples which were irradiated with 150keV protons. It was suggested that this was because the low-energy ions generated more defects at depths of between 50 and 100nm.

V.N.Abrosimova, V.V.Kozlovskii, N.N.Korobkov, V.N.Lomasov: Izvestiya Akademii Nauk SSSR - Neorganicheskie Materialy, 1990, 26[3], 488-91. (Inorganic Materials, 1990, 26[3], 411-4)