A model for Si diffusion was developed which was based upon the formation of SiGa+-VGa- pairs. By using recent data on the diffusivity of Ga vacancies, it was shown that the pair diffusion coefficient was approximately equal to 75% of the former value. The predictions of the model were found to be in good agreement with Si diffusion data.

K.B.Kahen: Journal of Applied Physics, 1989, 66[12], 6176-8