The diffusion of Si was studied after implanting Si into un-doped, Se-, Si- or Zn-doped material. The diffusion of grown-in Si in epitaxial layer structures was also studied. No diffusion was detected in un-doped or Zn-doped material, while a moderate amount of diffusion was detected in Si-doped samples. A significant amount of diffusion occurred in Se-doped material and in non-implanted Si-doped epitaxial samples. The results indicated that diffusion was controlled by a Fermi-level mechanism which probably involved ionized Ga vacancies, and that implantation damage inhibited diffusion by keeping the electron concentration and/or the ionized Ga vacancy concentration at a low level.

J.J.Murray, M.D.Deal, D.A.Stevenson: Applied Physics Letters, 1990, 56[5], 472-4