Electron-beam deposited films of phosphosilicate were used for the encapsulation of Si-implanted material during post-implantation annealing. Depth profiles which were in excellent agreement with the Lindhard-Scharff-Schiott curves were obtained by using 100nm thick films and by annealing for 0.5h at 850C. The diffusion coefficient of implanted Si was found to be an order of magnitude smaller for phosphosilicate films than for conventional plasma-assisted chemical vapor deposited SiO2 films.

S.Singh, F.Baiocchi, A.D.Butherus, W.H.Grodkiewicz, B.Schwartz, L.G.Van Uitert, L.Yesis, G.J.Zydzik: Journal of Applied Physics, 1988, 64[8], 4194-8