A review was presented of self-diffusion mechanisms and doping-enhanced superlattice disordering. The mechanism of enhanced superlattice disordering due to Si doping was a Fermi-level effect which increased the concentrations of charged point defects. The diffusion of Si appeared to be governed by Ga vacancies, and was well described by current Si pair diffusion models. It was concluded that dislocations in this material and in other III-V compounds were only moderately efficient sinks or sources for point defects.

T.Y.Tan, U.Gösele: Materials Science and Engineering, 1988, B1, 47-65