High-quality samples were prepared by means of chemical beam epitaxy, at a substrate temperature of 500C, by using triethylgallium and arsine. Capacitance-voltage measurements of Si-doped material revealed profile widths of 2.2nm at 300K and 1.8nm at 77K. This indicated that a high degree of Si spatial localization had been achieved. Subsequent annealing treatments showed that appreciable Si segregation and diffusion occurred at a growth temperature of about 600C. The capacitance-voltage widths of annealed doped structures provided a good estimate of the diffusion coefficient of Si in GaAs.

T.H.Chiu, J.E.Cunningham, B.Tell, E.F.Schubert: Journal of Applied Physics, 1988, 64[3], 1578-80