Data were presented which demonstrated that the surface encapsulant and As4 over-pressure strongly affected Si. An increase in the As4 over-pressure resulted in an increase in the diffusion depth. No band-edge exciton was observed during absorption on material that was diffused with Si, in spite of the high degree of compensation.

L.J.Guido, W.E.Plano, D.W.Nam, N.Holonyak, J.E.Baker, R.D.Burnham, P.Gavrilovic: Journal of Electronic Materials, 1988, 17[1], 53-6