The diffusion profiles of buried Si dopant which had been implanted by using a focussed ion beam were determined after annealing. The diffusion coefficient of the Si was determined by fitting the results of computer calculations. Concentration-dependent diffusion of Si which had been introduced by using a molecular beam was observed. However, the diffusion coefficient of Si which had been introduced by using a focussed ion beam was undetectably small when compared with that of Be at 850C.

T.Morita, J.Kobayashi, T.Takamori, A.Takamori, E.Miyauchi, H.Hashimoto: Japanese Journal of Applied Physics, 1987, 26[8], 1324-7