Implantation of Si into (x11)A-oriented semi-insulating GaAs substrates (where x took values of up to 4) was carried out. For comparison, (110)- and (100)-oriented substrates were also implanted. No in-diffusion of Si was observed after annealing substrates with any orientation. A similar behavior was observed for Si implants in GaAs and for Si/B co-implants.

M.V.Rao, H.B.Dietrich, P.B.Klein, A.Fathimulla, D.S.Simons, P.H.Chi: Journal of Applied Physics, 1994, 75[12], 7774-8