A study was made of the transport properties of the 2-dimensional electron gas in annealed Si -doped structures. The diffusion rate of Si atoms was deduced from the temperature dependence of the sub-band population. In samples with large self-compensation, it was found that the electron density increased after annealing at temperatures below 800C. After annealing at temperatures above 800C, there was a reduction in the electron concentration of the 2-dimensional electron gas. The results showed that, after annealing, the quantum mobility in the lowest sub-band increased slightly, while the quantum mobility in the higher sub-bands markedly decreased.

P.M.Koenraad, I.Bársony, A.F.W.Van der Stadt, J.A.A.J.Perenboom, J.H.Wolter: Materials Science Forum, 1994, 143-147, 663-8