The thermal equilibrium concentrations of the various negatively charged Ga vacancy species were calculated. The triply negatively charged Ga vacancy, VGa3-, was studied in particular because it dominated Ga self-diffusion and Ga/Al interdiffusion under intrinsic and n-doping conditions, as well as the diffusion of Si donor atoms which occupied Ga sites.

T.Y.Tan, H.M.You, U.M.Gösele: Applied Physics A, 1993, 56[3], 249-58