The lateral diffusion of sources during the selective growth of metalorganic vapor-phase epitaxial Si-doped layers was analyzed. The diffusion lengths of Si species were deduced from the carrier concentration profiles which were measured by using Raman spectroscopy and thickness profiling. On the basis of these diffusion lengths, it was speculated that the effective diffusion material was silyl arsine. It was suggested that there was no difference between arsine and tertiary butyl arsine, as diffusion sources.

N.Hara, K.Shiina, T.Ohori, K.Kasai, J.Komeno: Journal of Applied Physics, 1993, 74[2], 1327-30