A new mechanism was proposed for the incorporation of Si into GaAs/Si hetero-epitaxial layers which were grown by metalorganic chemical vapor deposition. The mechanism involved gas-phase transport of Si to hetero-epitaxial layers during growth. This mode of Si uptake could operate as well as the previously proposed mechanism. The latter involved incorporation by enhanced diffusion, from the hetero-interface, via defects in the GaAs layer.

S.Nozaki, J.J.Murray, A.T.Wu, T.George, E.R.Weber, M.Umeno: Applied Physics Letters, 1989, 55[16], 1674-6