Preferential diffusion channels for Si were found in GaAs which had been grown, by means of metal-organic vapor phase epitaxy, onto Si(100). The density of these diffusion channels was consistent with the measured dislocation density. Also, by combining scanning electron microscopy and X-ray fluorescence, it was shown that a large amount of Si emerged at the surface within small [011]-type overgrowth-oriented defects that were present at the surface.

A.Freundlich, A.Leycuras, J.C.Grenet, C.Grattepain: Applied Physics Letters, 1988, 53[26], 2635-7