A scanned electron beam was used to diffuse Sn into GaAs from doped emulsions, and Rutherford back-scattering was used to investigate the results. It was found that diffusion was greatly enhanced by capping the emulsion with evaporated SiO2.

Z.Meglicki, D.D.Cohen, A.G.Nassibian: Journal of Applied Physics, 1987, 62[5], 1778-81