The migration of Zn in AlGaAs at 650C was studied by using the sealed-ampoule method and a ZnAs2 source. It was found that the results for zero Al content (table 28) could be described by the expression:

D (cm2/s) = 26 exp[-2.47(eV)/kT]

V.Quintana, J.J.Clemencon, A.K.Chin: Journal of Applied Physics, 1988, 63[7], 2454-5

 

 

 

Table 28

Bulk Diffusivity of Zn in GaAs

 

Temperature (C)

D (cm2/s)

700

4.08 x 10-12

650

1.00 x 10-12

600

1.84 x 10-13

550

1.83 x 10-14