Emission channelling studies were used to determine the lattice sites of radioactive impurities in type-IIa diamond, after low-dose room-temperature implantation and annealing. The recovery of implantation damage was studied following the implantation of 111In and 73As. Two distinct annealing stages were observed. One occurred between 300 and 600K, and the other occurred at 1200K. The lattice sites of the potential donor 8Li, 33P and 73As atoms were studied, and it was concluded that Li occupied mainly tetrahedral interstitial sites. A smaller substitutional fraction was thought to be due to replacement collisions during implantation. No significant Li diffusion occurred at up to 900K. Emission channelling measurements revealed high substitutional fractions of 70 and 55% for P and As, respectively.

Ion Implantation and Annealing of Diamond Studied by Emission Channelling and Cathodoluminescence. C.Ronning, H.Hofsass: Diamond and Related Materials, 1999, 8[8-9], 1623-30