The Zn diffusion doping of GaAs, by using metalorganic vapor-phase epitaxy and diethylzinc as a dopant source, was examined. Typical Zn concentrations and depths which were obtained were 1019 to 1021/cm3, and 40 to 200nm. The highest concentration gradient which was obtained in this way was 4 orders of magnitude per 50nm, and the highest Zn concentration was 2 x 1021/cm3 at the sample surface.

Z.F.Paska, D.Haga, B.Willén, M.K.Linnarsson: Applied Physics Letters, 1992, 60[13], 1594-6