Samples were diffused with Zn, via a 200 to 300nm protective ZrO2 layer. The diffusion depth exhibited a square-root time dependence. The absolute diffusivity values depended slightly upon the diffusion conditions (table 30). The layer had essentially no effect upon the carrier concentration profile or the activation energy.

J.E.Bisberg, A.K.Chin, F.P.Dabkowski: Journal of Applied Physics, 1990, 67[3], 1347-51

 

 

 

Table 30

Diffusivity of Zn in GaAs

 

Protection

Source

Temperature (C)

D (cm2/s)

ZrO2

Zn

755

3.8 x 10-11

ZrO2

Zn

700

1.2 x 10-11

ZrO2

Zn

650

6.9 x 10-12

ZrO2

Zn

600

1.3 x 10-12

ZrO2

GaAs/Zn2As3

650

2.0 x 10-12

-

GaAs/Zn2As3

650

1.6 x 10-12

ZrO2

GaAs/Zn2As3

600

4.5 x 10-13

-

GaAs/Zn2As3

600

3.8 x 10-13

-

GaAs/Zn2As3

755

1.2 x 10-11

-

GaAs/Zn2As3

700

4.0 x 10-12

ZrO2

GaAs/Zn2As3

700

3.1 x 10-12

ZrO2

GaAs/Zn2As3

755

9.7 x 10-12