A review was presented of self-diffusion mechanisms and doping-enhanced superlattice disordering. With regard to the influence of Zn p-type dopants, the Fermi level effect had to be considered. In accord with its effect upon superlattice disordering, Zn diffusion appeared to be governed by the kick-out mechanism. It was concluded that dislocations in this material and in other III-V compounds were only moderately efficient sinks or sources for point defects.

T.Y.Tan, U.Gösele: Materials Science and Engineering, 1988, B1, 47-65