The diffusion of Zn into GaAs, from diethylzinc and trimethylarsenic, was studied. The process produced surface hole concentrations which were greater than 1020/cm3. Well-controlled junction depths which could be as shallow as 0.000lmm were obtained, and a smooth surface morphology was retained. The profile shape was much more complex than those predicted by accepted interstitial cum substitutional Zn diffusion models. In order to explain the observed profiles, a new model for Zn diffusion was proposed, and used in a computer simulation.

S.Reynolds, D.W.Vook, J.F.Gibbons: Journal of Applied Physics, 1988, 63[4], 1052-9