Second diffusion of Zn was observed using low concentrations. The behavior was similar to that of double diffusion in InP. The effect of the Zn activity in the vapor phase was studied by using a semi-closed box system. The observed Zn profiles were explained in terms of a model which involved varying charge transfer by vacancy centers during interstitial-substitutional interchanges.

K.Kazmierski, F.Launay, B.De Cremoux: Japanese Journal of Applied Physics, 1987, 26[10], 1630-3