A ternary Zn3As2-ZnAs2-GaAs source for the diffusion of Zn into GaAs was developed by using a low-temperature sintering technique. It was noted that wafers which were diffused by using this source remained free from damage. The dopant concentrations and diffusion depths agreed with the results which were obtained by using high-temperature Ga/As/Zn diffusion sources.

J.Werner, H.Melchior: Japanese Journal of Applied Physics, 1987, 26[4], 641-2