The diffusion of Zn, at high concentrations, into samples under As-deficient ambient conditions led to the generation of defects such as dislocation loops, elongated dislocations and Ga precipitates - decorated with voids- throughout the diffusion zone. Similar treatments under As vapor led to the recovery of diffusion-induced damage in regions beneath the surface. This was accompanied by the appearance of 2 distinct steps in the Zn concentration profile. Previous work had suggested that these phenomena were associated with the out-diffusion of Ga from the precipitates and towards the surface. It was shown here that the replacement of As by P or Sb produced similar recovery effects. This indicated that ambient group-V elements made the near-surface of GaAs into an effective sink for diffusion-induced excess Ga.

G.Bösker, H.G.Hettwer, A.Rucki, N.A.Stolwijk, H.Mehrer, W.Jäger, K.Urban: Materials Chemistry and Physics, 1995, 42[1], 68-71